Datasheet4U Logo Datasheet4U.com

TK40M60U

MOSFETs

TK40M60U Features

* (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.065 Ω (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain

TK40M60U Datasheet (243.34 KB)

Preview of TK40M60U PDF

Datasheet Details

Part number:

TK40M60U

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

243.34 KB

Description:

Mosfets.

📁 Related Datasheet

TK40A06N1 Silicon N-Channel MOSFET (Toshiba Semiconductor)

TK40A06N1 N-Channel MOSFET (INCHANGE)

TK40A08K3 MOSFET (Toshiba Semiconductor)

TK40A10J1 MOSFET (Toshiba Semiconductor)

TK40A10K3 Field Effect Transistor (Toshiba Semiconductor)

TK40A10N1 Silicon N-Channel MOSFET (Toshiba Semiconductor)

TK40A10N1 N-Channel MOSFET (INCHANGE)

TK40D10J1 MOSFET (Toshiba Semiconductor)

TK40E06N1 N-Channel MOSFET (INCHANGE)

TK40E06N1 Silicon N-Channel MOSFET (Toshiba Semiconductor)

TAGS

TK40M60U MOSFETs Toshiba Semiconductor

Image Gallery

TK40M60U Datasheet Preview Page 2 TK40M60U Datasheet Preview Page 3

TK40M60U Distributor