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TK55D10J1 Datasheet - Toshiba Semiconductor

TK55D10J1 N-Channel MOSFET

TK55D10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK55D10J1 Switching Regulator Applications High-Speed switching Low gate charge: Qg = 110 nC (typ.) Low drain-source ON resistance: RDS (ON) = 8.4 mΩ (typ.) High forward transfer admittance: |Yfs| = 110 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum .

TK55D10J1-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TK55D10J1

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

166.59 KB

Description:

N-channel mosfet.

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TK55D10J1 TK55D10J1 N-Channel MOSFET Toshiba Semiconductor