TK55S10N1 Datasheet, Mosfet, Toshiba Semiconductor

TK55S10N1 Features

• Mosfet (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 5.5 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0

PDF File Details

Part number:

TK55S10N1

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

268.46kb

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📄 Datasheet

Description:

N-channel mosfet.

TK55S10N1 Application

• Applications
• Automotive
• Switching Voltage Regulators
• Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-so

TAGS

TK55S10N1

Toshiba Semiconductor

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