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TK55S10N1 Datasheet - Toshiba Semiconductor

TK55S10N1 N-Channel MOSFET

TK55S10N1 Features

* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 5.5 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK55S10N1 1: Gate 2: Drain (heatsink) 3: So

TK55S10N1-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TK55S10N1

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

268.46 KB

Description:

N-channel mosfet.

TK55S10N1 Distributor

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TK55S10N1 TK55S10N1 N-Channel MOSFET Toshiba Semiconductor