TK55S10N1 - N-Channel MOSFET

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Toshiba Semiconductor

Part number	TK55S10N1
Manufacturer	Toshiba Semiconductor
File Size	268.46 KB
Description	N-Channel MOSFET
Datasheet	TK55S10N1 Datasheet
Additional preview pages of the TK55S10N1 datasheet.

(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 5.5 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK55S10N1 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current.

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Published: Sep 5, 2014 |