* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 5.5 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK55S10N1 1: Gate 2: Drain (heatsink) 3: So
TK55S10N1 Datasheet (268.46 KB)
TK55S10N1
Toshiba ↗ Semiconductor
268.46 KB
N-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK55S10N1
1. Applications
* Automotive
* Switching Voltage Regulators
* Motor Drivers.
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スイッチングレギュレーター
: mm
z ゲートがさい。 : Qg=110nC ()
z オンがい。
:RDS (ON) = 8.4 mΩ ()
z アドミタンスがい。 : |Yfs| = .
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Switching Regulator Applications
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