Part number:
TK55S10N1
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
268.46 KB
Description:
N-channel mosfet.
TK55S10N1 Datasheet (268.46 KB)
Datasheet Details
TK55S10N1 Features
* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 5.5 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK55S10N1 1: Gate 2: Drain (heatsink) 3: So
TK55S10N1 Datasheet (268.46 KB)
Datasheet Details
TK55S10N1
Toshiba ↗ Semiconductor
268.46 KB
N-channel mosfet.
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TK55S10N1 Distributor
