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TK58A06N1 Datasheet - Toshiba Semiconductor

TK58A06N1-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TK58A06N1

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

234.96 KB

Description:

Silicon n-channel mosfet.

TK58A06N1, Silicon N-Channel MOSFET

TK58A06N1 Features

* (1) Low drain-source on-resistance: RDS(ON) = 4.4 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK58A06N1 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximu

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