Part number:
TK58A06N1
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
234.96 KB
Description:
Silicon n-channel mosfet.
TK58A06N1 Datasheet (234.96 KB)
* (1) Low drain-source on-resistance: RDS(ON) = 4.4 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK58A06N1 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximu
TK58A06N1 Datasheet (234.96 KB)
TK58A06N1
Toshiba ↗ Semiconductor
234.96 KB
Silicon n-channel mosfet.
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