Datasheet Specifications
- Part number
- TK58A06N1
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 234.96 KB
- Datasheet
- TK58A06N1-ToshibaSemiconductor.pdf
- Description
- Silicon N-Channel MOSFET
Description
MOSFETs Silicon N-channel MOS (U-MOS-H) TK58A06N1 1.Applications * Switching Voltage Regulators 2..
Features
* (1) Low drain-source on-resistance: RDS(ON) = 4.4 mΩ (typ. ) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK58A06N1 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute MaximuTK58A06N1 Distributors
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