Part number:
TK58E06N1
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
244.74 KB
Description:
Silicon n-channel mosfet.
TK58E06N1 Datasheet (244.74 KB)
* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum
TK58E06N1 Datasheet (244.74 KB)
TK58E06N1
Toshiba ↗ Semiconductor
244.74 KB
Silicon n-channel mosfet.
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