TK5Q60W - MOSFETs

Product Overview

Toshiba Semiconductor

Part number	TK5Q60W
Manufacturer	Toshiba Semiconductor
File Size	240.67 KB
Description	MOSFETs
Datasheet	TK5Q60W Datasheet
Additional preview pages of the TK5Q60W datasheet.

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.77 Ω (typ. ) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.27 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source IPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche.

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Published: Sep 6, 2014 |