TK6Q60W Datasheet - Toshiba Semiconductor

TK6Q60W, Silicon N-Channel MOSFET

TK6Q60W MOSFETs Silicon N-Channel MOS (DTMOS) TK6Q60W 1.

Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.68 Ω (typ.
) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.31 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source IPAK Start of com

TK6Q60W-ToshibaSemiconductor.pdf