TK6Q60W - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TK6Q60W
Manufacturer	Toshiba Semiconductor
File Size	241.45 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK6Q60W-ToshibaSemiconductor.pdf

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.68 Ω (typ. ) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.31 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source IPAK Start of commercial production 1 2012-09 2014-01-05 Rev.3.0 TK6Q60W 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain curre.

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Published: Sep 6, 2014 |