TK8S06K3L Datasheet - Toshiba Semiconductor

TK8S06K3L, Silicon N-channel MOSFET

TK8S06K3L MOSFETs Silicon N-channel MOS (U-MOS) TK8S06K3L 1.Applications * * * * Automotive Motor Drivers DC-DC Con.

Features

* (1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 43 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ S

TK8S06K3L-ToshibaSemiconductor.pdf