TPC8201 Datasheet (Toshiba Semiconductor)

TPC8201, N-Channel MOSFET

TPC8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSVI) TPC8201 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l Low drain source ON resistance l High forward transfer admittance l Low leakage current l Enhancement mode : RDS (ON) = 37 mΩ (typ.) : |Yfs| = 6 S (typ.) Unit: mm : IDSS = 10 µA (max) (VDS = 30 V) : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drai