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TPC8201 Datasheet - Toshiba Semiconductor

TPC8201 N-Channel MOSFET

TPC8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSVI) TPC8201 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l Low drain source ON resistance l High forward transfer admittance l Low leakage current l Enhancement mode : RDS (ON) = 37 mΩ (typ.) : |Yfs| = 6 S (typ.) Unit: mm : IDSS = 10 µA (max) (VDS = 30 V) : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drai.

TPC8201_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TPC8201

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

341.94 KB

Description:

N-channel mosfet.

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TPC8201 TPC8201 N-Channel MOSFET Toshiba Semiconductor

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