TPC8207 Datasheet - Toshiba Semiconductor

TPC8207 Silicon N-Channel MOSFET

TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8207 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Unit.

TPC8207 Features

* ts, transportation instruments, traffic signal instruments, combustion control instruments, medic

TPC8207 Datasheet (219.53 KB)