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TPC8229-H Datasheet - Toshiba

TPC8229-H Silicon N-Channel MOSFET

TPC8229-H Features

* (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 2.4 nC (typ.) Low drain-source on-resistance: RDS(ON) = 53 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1, 3: Source

TPC8229-H-Toshiba.pdf

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Datasheet Details

Part number:

TPC8229-H

Manufacturer:

Toshiba ↗

File Size:

255.74 KB

Description:

Silicon n-channel mosfet.

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TPC8229-H TPC8229-H Silicon N-Channel MOSFET Toshiba

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