TPC8229-H Datasheet, Mosfet, Toshiba

✔ TPC8229-H Features

(1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 2.4 nC (typ.) Low drain-source on-resistance: RDS(ON) = 53 mΩ (typ.) Low leakage current: IDSS = 10 µA (

✔ TPC8229-H Application

DC-DC Converters CCFL Inverters 2. Features (1) (2) (3) (4) (5) High-speed switching Small gate charge:

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TPC8229-H

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📄 Datasheet

Description:

Silicon n-channel mosfet.

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TPC8229-H Silicon N-Channel MOSFET Toshiba