TPC8211 Datasheet (Toshiba) - N-Channel MOSFET

TPC8211, N-Channel MOSFET

TPC8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOS III) TPC8211 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications l Low drain source ON resistance: RDS (ON) = 25 mΩ (typ.) l High forward transfer admittance: |Yfs| = 7.0 S (typ.) l Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) l Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-sourc