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TPC8210 Datasheet - Toshiba Semiconductor

TPC8210 N-Channel MOSFET

TPC8210 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOS III) TPC8210 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications z Low drain source ON resistance: RDS (ON) = 11 mΩ (typ.) z High forward transfer admittance: |Yfs| = 13 S (typ.) z Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) z Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Charact.

TPC8210 Features

* computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted

TPC8210 Datasheet (297.60 KB)