TPC8206 Datasheet (Toshiba Semiconductor)

TPC8206, N-Channel MOSFET

TPC8206 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8206 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement-mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratin

TPC8206 Features

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