* (1) Small, thin package (2) High-speed switching (3) Small gate change: QSW = 3.5 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packagin
TPC8221-H Datasheet (397.36 KB)
TPC8221-H
Toshiba ↗ Semiconductor
397.36 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC8221-H 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile .
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