Datasheet4U.com

TPC8221-H Datasheet - Toshiba Semiconductor

TPC8221-H Silicon N-Channel MOSFET

TPC8221-H Features

* (1) Small, thin package (2) High-speed switching (3) Small gate change: QSW = 3.5 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packagin

TPC8221-H-ToshibaSemiconductor.pdf

TPC8221-H Datasheet Preview — Preview of TPC8221-H PDF

TPC8221-H Datasheet Preview Page 2

TPC8221-H Datasheet Preview Page 3

Datasheet Details

Part number:

TPC8221-H

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

397.36 KB

Description:

Silicon n-channel mosfet.

📁 Related Datasheet

TPC8223-H Silicon N-Channel MOSFET (Toshiba)

TPC8224-H Silicon N-Channel MOSFET (Toshiba)

TPC8227-H Silicon N-Channel MOSFET (Toshiba)

TPC8228-H Silicon N-Channel MOSFET (Toshiba)

TPC8229-H Silicon N-Channel MOSFET (Toshiba)

TPC8229-H N-Channel 80V MOSFET (VBsemi)

TPC8201 N-Channel MOSFET (Toshiba Semiconductor)

TPC8202 N-Channel MOSFET (Toshiba Semiconductor)

TAGS

TPC8221-H TPC8221-H Silicon N-Channel MOSFET Toshiba Semiconductor

TPC8221-H Distributor