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TPCA8135

MOSFETs Silicon P-Channel MOS

TPCA8135 Features

* (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 96 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 5, 6, 7, 8: Drain 4:

TPCA8135 Datasheet (300.15 KB)

Preview of TPCA8135 PDF

Datasheet Details

Part number:

TPCA8135

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

300.15 KB

Description:

Mosfets silicon p-channel mos.

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TPCA8135 MOSFETs Silicon P-Channel MOS Toshiba Semiconductor

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