* (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 2.4 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 5, 6, 7, 8: Drain 4:
TPCA8121 Datasheet (256.48 KB)
TPCA8121
256.48 KB
Field effect transistor.
TPCA8121
MOSFETs Silicon P-Channel MOS (U-MOS)
TPCA8121
1. Applications
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* Lithium-Ion Secondary Batteries Power Management Switche.
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