* (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 2.4 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TPCA8120 1
TPCA8120 Datasheet (228.93 KB)
TPCA8120
228.93 KB
Silicon p-channel mosfet.
MOSFETs Silicon P-Channel MOS (U-MOS)
TPCA8120
1. Applications
* Lithium-Ion Secondary Batteries
* Power Management Switches
2. Featu.
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