TPCF8001 Datasheet (Toshiba Semiconductor)

TPCF8001, N-Channel MOSFET

www.DataSheet4U.com TPCF8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCF8001 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) High forward transfer admittance: |Yfs| = 8 S (typ.) Low leakage current: IDSS = 10 μA (max.) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain

TPCF8001 Features

* ws and regulations. 7 2007-01-16