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TPCF8001 N-Channel MOSFET

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Description

www.DataSheet4U.com TPCF8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCF8001 Notebook PC Applications Portable Equi.

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Features

* ws and regulations. 7 2007-01-16

Applications

* Portable Equipment Applications
* Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ. ) High forward transfer admittance: |Yfs| = 8 S (typ. ) Low leakage current: IDSS = 10 μA (max. ) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA) Unit:

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TPCF8001 N-Channel MOSFET Toshiba Semiconductor
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