TPCF8103 Datasheet - Toshiba Semiconductor

MOSFET

www.DataSheet4U.com TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8103 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) High forward transfer admittance: |Yfs| = 4.7S (typ.) Low leakage current: IDSS = -10 μA (max) (VDS = -20 V) Enhancement-model: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -200μA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characterist.

MOSFET

TPCF8103 Features

* . Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document

TPCF8103 Datasheet (290.74 KB)