Datasheet4U Logo Datasheet4U.com

TPCF8108 Datasheet - Toshiba Semiconductor

TPCF8108 MOSFETs

TPCF8108 Features

* (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 21 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.5 mA) 3. Packaging and Internal Circuit 5: Sourc

TPCF8108 Datasheet (218.82 KB)

Preview of TPCF8108 PDF
TPCF8108 Datasheet Preview Page 2 TPCF8108 Datasheet Preview Page 3

Datasheet Details

Part number:

TPCF8108

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

218.82 KB

Description:

Mosfets.

📁 Related Datasheet

TPCF8101 MOSFET (Toshiba Semiconductor)

TPCF8102 Silicon P-Channel MOSFET (Toshiba Semiconductor)

TPCF8103 MOSFET (Toshiba Semiconductor)

TPCF8104 MOSFET (Toshiba Semiconductor)

TPCF8105 Field Effect Transistor (Toshiba)

TPCF8107 MOSFET (Toshiba Semiconductor)

TPCF8001 N-Channel MOSFET (Toshiba Semiconductor)

TPCF8002 MOSFET (Toshiba Semiconductor)

TAGS

TPCF8108 MOSFETs Toshiba Semiconductor

TPCF8108 Distributor