* (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 21 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.5 mA) 3. Packaging and Internal Circuit 5: Sourc
TPCF8108 Datasheet (218.82 KB)
TPCF8108
Toshiba ↗ Semiconductor
218.82 KB
Mosfets.
TPCF8108 MOSFETs Silicon P-Channel MOS (U-MOS) TPCF8108 1. Applications Lithium-Ion Secondary Batteries Power Manageme.
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