TPCF8105 Datasheet, Transistor, Toshiba

✔ TPCF8105 Features

(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 24 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (

Lithium-Ion Secondary Batteries Power Management Switches 2. Features (1) (2) (3) (4) Small footprint d

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TPCF8105

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Field effect transistor.

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TPCF8105 Field Effect Transistor Toshiba