Datasheet Specifications
- Part number
- TPCF8105
- Manufacturer
- Toshiba ↗
- File Size
- 249.88 KB
- Datasheet
- TPCF8105_Toshiba.pdf
- Description
- Field Effect Transistor
Description
TPCF8105 MOSFETs Silicon P-Channel MOS (U-MOS) TPCF8105 1.Applications * * Lithium-Ion Secondary Batteries Power Management Switche.
Features
* (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 24 mΩ (typ. ) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.5 mA) 3. Packaging and Internal Circuit 5: SourcTPCF8105 Distributors
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