TPC6109-H Datasheet - Toshiba

TPC6109-H P-Channel MOSFET

TPC6109-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6109-H High-Efficiency DC-DC Converter Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 44 mΩ (typ.) (VDS = 10 V) High forward transfer admittance: |Yfs| = 8.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 0.8 to

TPC6109-H Features

* e reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.

* Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fai

TPC6109-H Datasheet (293.38 KB)