TPC6103 - P-Channel MOSFET
TPC6103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC6103 Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.) High forward transfer admittance: |Yfs| = 13 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 12 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA) Absolute Maximum Ratings
