TPC6107 Datasheet - Toshiba Semiconductor

TPC6107 P-Channel MOSFET

TPC6107 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV) TPC6107 Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.) High forward transfer admittance: |Yfs| = 9.6 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement model: Vth = 0.5 to 1.2 V (VD.

TPC6107 Features

* ensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could caus

TPC6107_ToshibaSemiconductor.pdf