TPC6101 Datasheet - Toshiba Semiconductor

TPC6101 P-Channel MOSFET

TPC6101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) TPC6101 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 48 mΩ (typ.) High forward transfer admittance: |Yfs| = 8.2 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-model: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristi.

TPC6101_ToshibaSemiconductor.pdf