TPC6010-H N-Channel MOSFET

Toshiba

Description

TPC6010-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC6010-H 1.Applications * * * High-Efficiency DC-DC Converters Notebook .

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Datasheet Specifications

Part number: TPC6010-H
Manufacturer: Toshiba ↗
File Size: 250.30 KB
Datasheet: TPC6010-H_Toshiba.pdf
Description: N-Channel MOSFET

Features

* (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 2.7 nC(typ. ) Low drain-source on-resistance: RDS(ON) = 43mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging

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TPC6010-H N-Channel MOSFET Toshiba

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