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TPC6010-H Datasheet - Toshiba

TPC6010-H N-Channel MOSFET

TPC6010-H Features

* (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 2.7 nC(typ.) Low drain-source on-resistance: RDS(ON) = 43mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging

TPC6010-H_Toshiba.pdf

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Datasheet Details

Part number:

TPC6010-H

Manufacturer:

Toshiba ↗

File Size:

250.30 KB

Description:

N-channel mosfet.

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TPC6010-H TPC6010-H N-Channel MOSFET Toshiba

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