TPC6006-H Datasheet - Toshiba Semiconductor

TPC6006-H N-Channel MOSFET

TPC6006-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6006-H Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due to small and thin package High-speed switching Small gate charge: Qsw = 2.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 59 mΩ (typ.) High forward transfer admittance: |Yfs| = 7 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 40.

TPC6006-H-ToshibaSemiconductor.pdf