TPC6004 - N-Channel MOSFET
TPC6004 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6004 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-s
