TPC6002 - N-Channel MOSFET
www.DataSheet4U.com TPC6002 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC6002 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 25 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement-model: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate
