Datasheet4U Logo Datasheet4U.com

TPC6002 Datasheet - Toshiba Semiconductor

TPC6002 N-Channel MOSFET

www.DataSheet4U.com TPC6002 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC6002 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 25 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement-model: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate .

TPC6002_ToshibaSemiconductor.pdf

Preview of TPC6002 PDF
TPC6002 Datasheet Preview Page 2 TPC6002 Datasheet Preview Page 3

Datasheet Details

Part number:

TPC6002

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

182.26 KB

Description:

N-channel mosfet.

📁 Related Datasheet

TPC6001 N-Channel MOSFET (Toshiba Semiconductor)

TPC6003 N-Channel MOSFET (Toshiba Semiconductor)

TPC6004 N-Channel MOSFET (Toshiba Semiconductor)

TPC6005 N-Channel MOSFET (Toshiba Semiconductor)

TPC6006-H N-Channel MOSFET (Toshiba Semiconductor)

TPC6008-H MOSFETs (Toshiba Semiconductor)

TPC6009-H MOSFETs (Toshiba Semiconductor)

TPC6010-H N-Channel MOSFET (Toshiba)

TAGS

TPC6002 TPC6002 N-Channel MOSFET Toshiba Semiconductor

TPC6002 Distributor