TPC6005 - N-Channel MOSFET
TPC6005 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6005 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancementmode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-so
