TPC6003 - N-Channel MOSFET
TPC6003 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6003 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) High forward transfer admittance: |Yfs| = 7 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-sour
