Datasheet4U Logo Datasheet4U.com

TPC6003 Datasheet - Toshiba Semiconductor

TPC6003 N-Channel MOSFET

TPC6003 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6003 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) High forward transfer admittance: |Yfs| = 7 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-sour.

TPC6003_ToshibaSemiconductor.pdf

Preview of TPC6003 PDF
TPC6003 Datasheet Preview Page 2 TPC6003 Datasheet Preview Page 3

Datasheet Details

Part number:

TPC6003

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

258.20 KB

Description:

N-channel mosfet.

📁 Related Datasheet

TPC6001 N-Channel MOSFET (Toshiba Semiconductor)

TPC6002 N-Channel MOSFET (Toshiba Semiconductor)

TPC6004 N-Channel MOSFET (Toshiba Semiconductor)

TPC6005 N-Channel MOSFET (Toshiba Semiconductor)

TPC6006-H N-Channel MOSFET (Toshiba Semiconductor)

TPC6008-H MOSFETs (Toshiba Semiconductor)

TPC6009-H MOSFETs (Toshiba Semiconductor)

TPC6010-H N-Channel MOSFET (Toshiba)

TAGS

TPC6003 TPC6003 N-Channel MOSFET Toshiba Semiconductor

TPC6003 Distributor