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TPC6001 Datasheet - Toshiba Semiconductor

TPC6001 N-Channel MOSFET

TPC6001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC6001 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate volta.

TPC6001_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TPC6001

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

200.66 KB

Description:

N-channel mosfet.

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TPC6001 TPC6001 N-Channel MOSFET Toshiba Semiconductor

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