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TPC6001 N-Channel MOSFET

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Description

TPC6001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC6001 Notebook PC Applications Portable Equipment Applications

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Applications

* Portable Equipment Applications
* Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ. ) High forward transfer admittance: |Yfs| = 15 S (typ. ) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA) Un

TPC6001 Distributors

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📌 All Tags

TPC6001 N-Channel MOSFET Toshiba Semiconductor
Toshiba Semiconductor TPC6001-like datasheet
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