TPC6011 Datasheet - Toshiba

TPC6011 N-Channel MOSFET

TPC6011 TOSHIBA Field Effect Transistor TPC6011 Silicon N Channel MOS Type (U-MOSIV) Notebook PC Applications Portable Equipment Applications Low drain-source ON-resistance: RDS (ON) = 16 mΩ (typ.) ( VGS = 10V) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC (.

TPC6011 Features

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TPC6011_Toshiba.pdf