TPC6502 Datasheet - Toshiba

TPC6502 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6502 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications TPC6502 Unit: mm High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 120 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEX 80 V.

TPC6502 Datasheet (210.20 KB)