TPC6501 Datasheet - Toshiba Semiconductor

TPC6501 Silicon NPN Transistor

TPC6501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6501 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 25 ns (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector.

TPC6501_ToshibaSemiconductor.pdf