TPC6008-H Datasheet - Toshiba Semiconductor

TPC6008-H, MOSFETs

TPC6008-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC6008-H 1.Applications * * * High-Efficiency DC-DC Converters Notebook .

Features

* (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 0.9 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 50 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packagi

TPC6008-H-ToshibaSemiconductor.pdf