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TPC6008-H Datasheet - Toshiba Semiconductor

TPC6008-H MOSFETs

TPC6008-H Features

* (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 0.9 nC (typ.) Low drain-source on-resistance: RDS(ON) = 50 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packagi

TPC6008-H Datasheet (226.12 KB)

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Datasheet Details

Part number:

TPC6008-H

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

226.12 KB

Description:

Mosfets.

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TPC6008-H MOSFETs Toshiba Semiconductor

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