* (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 0.9 nC (typ.) Low drain-source on-resistance: RDS(ON) = 50 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packagi
TPC6008-H Datasheet (226.12 KB)
TPC6008-H
Toshiba ↗ Semiconductor
226.12 KB
Mosfets.
TPC6008-H
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TPC6008-H
1. Applications
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* High-Efficiency DC-DC Converters Notebook .
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