TPC6104 Datasheet - Toshiba Semiconductor

TPC6104 P-Channel MOSFET

TPC6104 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC6104 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 33 mΩ (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm Maximu.

TPC6104 Features

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* The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for

TPC6104 Datasheet (229.97 KB)