TPCF8104 Datasheet (Toshiba Semiconductor)

TPCF8104, MOSFET

www.DataSheet4U.com TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCF8104 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) High forward transfer admittance: |Yfs| = 9.6 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1mA) Unit: mm Absolu

TPCF8104 Features

* ranted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.

* Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all app