TPCF8101 Datasheet - Toshiba Semiconductor

TPCF8101 MOSFET

www.DataSheet4U.com TPCF8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8101 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 12 V) Enhancement model: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA) Unit: mm .

TPCF8101 Features

* ring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintend

TPCF8101 Datasheet (239.08 KB)