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TPCF8107 MOSFET

TPCF8107 Description

TPCF8107 MOSFETs Silicon P-Channel MOS (U-MOS) TPCF8107 1.Applications * * * Lithium-Ion Secondary Batteries Power Manageme.

TPCF8107 Features

* (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ. ) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA) 3. Packaging and Internal Circuit 5: Source

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MOSFET Toshiba Semiconductor
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