* (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA) 3. Packaging and Internal Circuit 5: Source
TPCF8107 Datasheet (227.69 KB)
TPCF8107
Toshiba ↗ Semiconductor
227.69 KB
Mosfet.
TPCF8107
MOSFETs Silicon P-Channel MOS (U-MOS)
TPCF8107
1. Applications
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* Lithium-Ion Secondary Batteries Power Manageme.
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