TPCF8003 Datasheet - Toshiba Semiconductor

TPCF8003 MOSFET

www.DataSheet4U.com TPCF8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TPCF8003 Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) =14 mΩ (typ.) （VGS= 4.5V） Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Dr.

TPCF8003 Features

* n life, bodily injury, serious property damage or serious public impact (“Unintended Use”).

TPCF8003_ToshibaSemiconductor.pdf