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TPCF8004

Silicon N-Channel MOSFET

TPCF8004 Features

* (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TPCF8004 1, 2, 3

TPCF8004 Datasheet (228.86 KB)

Preview of TPCF8004 PDF

Datasheet Details

Part number:

TPCF8004

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

228.86 KB

Description:

Silicon n-channel mosfet.

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TAGS

TPCF8004 Silicon N-Channel MOSFET Toshiba Semiconductor

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