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TPCF8004 Silicon N-Channel MOSFET

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Description

MOSFETs Silicon N-Channel MOS (U-MOS) TPCF8004 1.Applications * Lithium-Ion Secondary Batteries 2..

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Features

* (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TPCF8004 1, 2, 3

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