TPCF8201 Datasheet - Toshiba Semiconductor

TPCF8201 Silicon N-Channel MOSFET

TPCF8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCF8201 Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) High forward transfer admittance: |Yfs| = 5.4 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Uni.

TPCF8201 Datasheet (244.02 KB)