TPCF8302 Datasheet - Toshiba Semiconductor

TPCF8302 MOSFET

www.DataSheet4U.com TPCF8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8302 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 44 mΩ (typ.) High forward transfer admittance: |Yfs| = 6.2 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA) Unit: mm A.

TPCF8302 Features

* is document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage i

TPCF8302_ToshibaSemiconductor.pdf