Part number:
TPCF8306
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
224.69 KB
Description:
Mosfet.
TPCF8306 Datasheet (224.69 KB)
* (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 90 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA) 3. Packaging and Internal Circuit 1: Sourc
TPCF8306 Datasheet (224.69 KB)
TPCF8306
Toshiba ↗ Semiconductor
224.69 KB
Mosfet.
📁 Related Datasheet
TPCF8301 FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (Toshiba Semiconductor)
TPCF8302 MOSFET (Toshiba Semiconductor)
TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Toshiba Semiconductor)
TPCF8304 MOSFET (Toshiba Semiconductor)
TPCF8305 MOSFET (Toshiba Semiconductor)
TPCF8001 N-Channel MOSFET (Toshiba Semiconductor)
TPCF8002 MOSFET (Toshiba Semiconductor)
TPCF8003 MOSFET (Toshiba Semiconductor)
TPCF8004 Silicon N-Channel MOSFET (Toshiba Semiconductor)
TPCF8101 MOSFET (Toshiba Semiconductor)
