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TPCF8306 Datasheet - Toshiba Semiconductor

TPCF8306 MOSFET

TPCF8306 Features

* (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 90 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA) 3. Packaging and Internal Circuit 1: Sourc

TPCF8306-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TPCF8306

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

224.69 KB

Description:

Mosfet.

TPCF8306 Distributor

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TPCF8306 TPCF8306 MOSFET Toshiba Semiconductor