TPCF8301 Datasheet - Toshiba Semiconductor

TPCF8301 FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE

www.DataSheet4U.com TPCF8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8301 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) High forward transfer admittance: |Yfs| = 4.7 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement model: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm .

TPCF8301 Features

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TPCF8301_ToshibaSemiconductor.pdf