TPCF8A01 Datasheet - Toshiba Semiconductor

TPCF8A01 Notebook PC Applications

TPCF8A01 www.DataSheet4U.com TOSHIBA Multi-Chip Device Silicon N Channel MOS Type (U-MOS III) / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) High forward transfer admittance: |Yfs| = 5.4 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA) Low forward voltage: VFM(2) = 0.46V(t.

TPCF8A01 Features

* ) 160 Ma

TPCF8A01_ToshibaSemiconductor.pdf