TPCF8B01 Silicon P-Channel MOSFET

Toshiba Semiconductor

Description

TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipme.

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Datasheet Specifications

Part number: TPCF8B01
Manufacturer: Toshiba ↗ Semiconductor
File Size: 330.33 KB
Datasheet: TPCF8B01_ToshibaSemiconductor.pdf
Description: Silicon P-Channel MOSFET

Applications

* Portable Equipment Applications Unit: mm
* Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ. )
* High forward transfer admittance: |Yfs| = 4.7 S (typ. )
* Low leakage current: IDSS =-10 μA (max) (VDS = -20 V)
* Enhancement-model: Vth = -0.5 to-1.2 V (VDS =-10 V,

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TPCF8B01 Silicon P-Channel MOSFET Toshiba Semiconductor

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