1SS176
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Switching diodes.
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1SS176 - SWITCHING DIODES
(Leshan Radio Company)
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1SS176 - HIGH SPEED SWITCHING DIODE
(EIC)
1SS176
FEATURES :
• High switching speed: max. 4 ns • Continuous reverse voltage:max. 30 V • Repetitive peak reverse voltage:max. 35 V • Pb / RoHS Fre.
1SS176 - SILICON EPITAXIAL PLANAR DIODE
(SEMTECH)
1SS176
Silicon Epitaxial Planar Switching Diode
Applications • High-speed switching
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Reverse Voltage Pe.
1SS177 - SWITCHING DIODES
(Toshiba)
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1SS178 - HIGH SPEED SWITCHING DIODE
(EIC)
1SS178
FEATURES :
• High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Fre.
1SS178 - SWITCHING DIODES
(Toshiba)
.
1SS101 - SUPER HIGH SPEED SWITCHING DIODE
(XIN SEMICONDUCTOR)
XIN SEMICONDUCTOR
ISO9002
1SS101 THUR 1SS301
SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY
FEATURES
For general purpo.
1SS101 - Mixer Diode
(NEC)
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1SS104 - SILICON DIODE
(Toshiba Semiconductor)
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1SS106 - Silicon Schottky Barrier Diode
(Hitachi Semiconductor)
1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-153A (Z) Rev. 1 Oct. 1998 Features
• Detection efficiency is.